| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| MT40A512M16TB-062E IT:R | IC |
MICRON/美光 |
24+ |
6000 |
||||
| NT5AD512M16C4-HR | IC |
NANYA/南亚 |
24+ |
8000 |
||||
| K4F6E3S4HM-MGCJ | IC |
SAMSUNG/三星 |
24+ |
8000 |
||||
| M321R8GA0PB0-CWMXJ | IC |
SAMSUNG/三星 |
25+ |
5000 |
||||
| FEMDRW008G-88A39 | IC |
FORESEE/江波龙 |
23+ |
2000 |
||||
| K4U6E3S4AB-MGCL | IC |
SAMSUNG/三星 |
24+ |
5000 |
||||
| NT5AD512M16C4-JR | IC |
NANYA/南亚 |
226+ |
6000 |
||||
| NT5AD512M16C4-JRI | IC |
NANYA/南亚 |
25+ |
8000 |
||||
| FEMDME008G-A8A39 | IC |
FORESEE/江波龙 |
24+ |
3040 |
||||
| KLM8G1GETF-B041006 | IC |
SAMSUNG/三星 |
24+ |
8000 |
||||
| ZED-F9P-04B-01 | IC |
U-BLOX |
1000 |
|||||
| ADM1278-1ACPZ-RL | 其他被动元件 |
ADI/亚德诺 |
24+ |
10000 |
||||
| H5AN8G6NDJR-XNC | 动态随机存取存储器(DRAM) |
SKHYNIX/海力士 |
24+ |
8000 |
||||
| MT41K256M16TW-107 IT:P | IC |
MICRON/美光 |
24+ |
8000 |
||||
| MT40A512M16TB-062E:R TR | IC |
MICRON/美光 |
FBGA-96 |
24+ |
8000 |
|||
| K4B4G1646E-BCNB | IC |
SAMSUNG/三星 |
24+ |
5000 |
||||
| FEMDNN128G-C9C76 | IC |
FORESEE/江波龙 |
24+ |
2000 |
||||
| BCM53333A0KFSBLG | IC |
BROADCOM/博通 |
BGA |
24+ |
3000 |
|||
| MT41K64M16TW-107 AAT:J | IC |
MICRON/美光 |
22+ |
2000 |
||||
| MAX20303DEWN+T | IC |
ADI(亚德诺)/MAXIM(美信) |
24+ |
5000 |
商家默认展示20条库存